NTLUS3A40PZ
Power MOSFET
? 20 V, ? 9.4 A, m Cool t Single P ? Channel,
ESD, 2.0x2.0x0.55 mm UDFN Package
Features
? UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
? Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
? Lowest RDS(on) in 2.0x2.0 Package
? ESD Protected
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? High Side Load Switch
? PA Switch and Battery Switch
? Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
V (BR)DSS
? 20 V
http://onsemi.com
MOSFET
R DS(on) MAX
29 m W @ ? 4.5 V
39 m W @ ? 2.5 V
60 m W @ ? 1.8 V
120 m W @ ? 1.5 V
S
I D MAX
? 9.4 A
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V DSS
V GS
? 20
± 8.0
V
V
D
P ? Channel MOSFET
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 6.4
? 4.6
A
MARKING
DIAGRAM
Power Dissipa-
tion (Note 1)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
P D
? 9.4
1.7
W
1
6
UDFN6
CASE 517BG
m COOL t
1
AA M G
G
Continuous Drain
Current (Note 2)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
3.8
? 4.0
? 2.9
A
AA = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Power Dissipation (Note 2)
Pulsed Drain Current
T A = 25 ° C
tp = 10 m s
P D
I DM
0.7
? 30
W
A
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
ESD Rating (HBM) per JESD22 ? A114F
T J ,
T STG
I S
T L
ESD
-55 to
150
? 1.0
260
>2000
° C
A
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
July, 2011 ? Rev. 3
1
Publication Order Number:
NTLUS3A40PZ/D
相关PDF资料
NTLUS3A90PZTBG POWER MOSFET 20V 3A 60 MO UDFN6
NTLUS4195PZTBG MOSFET P-CH 30V 3A SGL 6UDFN
NTMD2C02R2SG MOSFET N/P-CH COMPL 20V 8-SOIC
NTMD2P01R2G MOSFET PWR P-CHAN DUAL 16V 8SOIC
NTMD4184PFR2G MOSFET P-CH 30V 2.3A 8-SOIC
NTMD4820NR2G MOSFET N-CH DUAL 30V 4.9A 8-SOIC
NTMD4840NR2G MOSFET N-CH DUAL 30V 4.5A 8-SOIC
NTMD4884NFR2G MOSFET N-CH 30V 3.3A 8-SOIC
相关代理商/技术参数
NTLUS3A90PZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??5.0 A, Cool Single Pa??Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A90PZTAG 功能描述:IGBT 晶体管 POWER MOSFET 20V 3A 60 MO RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
NTLUS3A90PZTBG 功能描述:IGBT 晶体管 POWER MOSFET 20V 3A 60 MO RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
NTLUS4195PZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −4.0 A, Cool Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS4195PZTAG 功能描述:MOSFET NFET UDFN6 30V 3A 95 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLUS4195PZTBG 功能描述:MOSFET NFET UDFN6 30V 3A 95 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLUS4930N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 6.1 A, Single Na??Channel, 2.0x2.0x0.55 mm Cool UDFN6 Package
NTLUS4930NTAG 制造商:ON Semiconductor 功能描述:NFET UDFN6 30V 6.3A 26.3M - Tape and Reel 制造商:ON Semiconductor 功能描述:30V,6.3A,N-Channel power MOSFET